Talk:Field-effect transistor
Most of what I've done here doesn't need any explanation, but there's one correction I think warrants a note. I replaced every instance of "glass" with "oxide". This is because the silicon dioxide layer under a gate is not glass. Glass would not work. A glass is an amorphous solid - irregular arrangement of atoms. The common usage of "glass" happens to be an instance of this. SiO2 in MOSFETs is crystalline, not glass. -- Tim Starling
- Small correction: amorphous oxides can work perfectly well as gate oxides. see link. At least as far as I know, these films are almost entirely amorphous. The best films are done with ECR, but you can also use PECVD and get decent results. On physical grounds, I don't see any reason why a gate dielectric has to be crystalline in "work". --User:Dgrant
You're the man Dave, I'll take your word for it. Before you came along, I didn't know amorphous oxides were used for anything other than window glass :) I notice that the resistivity of the oxide in your reference is many orders of magnitude less than for crystalline silicon. That would degrade performance somewhat, but at least the breakdown voltage is still high. -- Tim Starling
what does "whereas those to the left abstract from the body contact." mean? It doesn't make any sense to me, or at least is doesn't convey the indended meaning, in my mind. dave
- It doesn't mean anything. I changed it to something which makes sense, and is probably right. I seem to remember seeing some FET-like structures with the body insulated from the backside, but I don't think they do that for MOSFETs. -- Tim Starling 00:39 May 14, 2003 (UTC)